Age, Biography and Wiki
Thomas Eugene Everhart was born on 15 February, 1932 in Kansas City, Missouri, U.S., is an American educator and physicist. Discover Thomas Eugene Everhart's Biography, Age, Height, Physical Stats, Dating/Affairs, Family and career updates. Learn How rich is he in this year and how he spends money? Also learn how he earned most of networth at the age of 92 years old?
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92 years old |
Zodiac Sign |
Aquarius |
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15 February 1932 |
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15 February |
Birthplace |
Kansas City, Missouri, U.S. |
Nationality |
United States
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We recommend you to check the complete list of Famous People born on 15 February.
He is a member of famous educator with the age 92 years old group.
Thomas Eugene Everhart Height, Weight & Measurements
At 92 years old, Thomas Eugene Everhart height not available right now. We will update Thomas Eugene Everhart's Height, weight, Body Measurements, Eye Color, Hair Color, Shoe & Dress size soon as possible.
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Dating & Relationship status
He is currently single. He is not dating anyone. We don't have much information about He's past relationship and any previous engaged. According to our Database, He has no children.
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Thomas Eugene Everhart Net Worth
His net worth has been growing significantly in 2023-2024. So, how much is Thomas Eugene Everhart worth at the age of 92 years old? Thomas Eugene Everhart’s income source is mostly from being a successful educator. He is from United States. We have estimated Thomas Eugene Everhart's net worth, money, salary, income, and assets.
Net Worth in 2024 |
$1 Million - $5 Million |
Salary in 2024 |
Under Review |
Net Worth in 2023 |
Pending |
Salary in 2023 |
Under Review |
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Not Available |
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Source of Income |
educator |
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Timeline
Thomas Eugene Everhart FREng (born February 15, 1932, Kansas City, Missouri) is an American educator and physicist.
His area of expertise is the physics of electron beams.
Together with Richard F. M. Thornley he designed the Everhart–Thornley detector.
An initial prototype, the SEM1, had been developed by Dennis McMullen, who published his dissertation Investigations relating to the design of electron microscopes in 1952.
It was further modified by Ken C. A. Smith, who developed a way to efficiently detect low-energy secondary electrons.
Oatley and his students used SEM to develop a variety of new techniques for studying surface topography.
Everhart developed techniques to detect low-energy secondaries.
Everhart received his A.B. in physics from Harvard University in 1953, and his M.S. in applied physics from the University of California, Los Angeles in 1955.
Everhart began working on electron detection and the design of scanning electron microscopes (SEMs) as a student with Charles Oatley at Cambridge in 1955.
These detectors are still in use in scanning electron microscopes, even though the first such detector was made available as early as 1956.
He held a Marshall Scholarship at Clare College, University of Cambridge, where he completed a PhD in Physics under Professor Charles Oatley in 1958.
His Ph.D. thesis, in 1958, was Contrast formation in the scanning electron microscope.
Analyzing the electrons detected by the SEM, he reported that about 67% of the signal measured could be attributed to low energy secondaries from the specimen.
About 3% was due to higher-energy reflected electrons.
He also presented equations to model the noise introduced.
Use of the term "voltage contrast" to describe the relationship between the voltage applied to a specimen and the resulting image contrast, is attributed to Everhart.
From 1958-1978 Everhart was a professor and latterly department chairman of engineering and computer science, at the University of California at Berkeley.
There he supported the construction of the first scanning electron microscope in a U.S. university.
As of 1959, Everhart produced the first voltage-contrast images of p-n junctions of biased silicon diodes.
Voltage contrast, the ability to detect variations in surface electrical potentials on a specimen, is now one of several imaging modes used for the characterization, diagnosis and failure analysis of semiconductors.
As many as half of the SEMs sold are believed to be used in semiconductor applications.
Everhart studied contrast mechanisms in detail and developed a new theory of reflection of electrons from solids.
He also made some of the first quantitative studies of the effects of beam penetration on image formation in the SEM.
In 1960 Everhart and Richard F. M. Thornley published a description for the improved design of a secondary electron detector, since known as the Everhart–Thornley detector.
Everhart and Thornley increased the efficiency of existing detectors by adding a light pipe to carry the photon signal from the scintillator inside the evacuated specimen chamber of the scanning electron microscopes to the photomultiplier outside the chamber.
This strengthened the signal collected and improved the signal-to-noise ratio.
In the 1960s, Wells, Everhart, and Matta built an advanced SEM for semiconductor studies and microfabrication at Westinghouse Laboratories in Pittsburgh.
They were able to combine signals so to more effectively examine multiple layers in active devices, an early example of EBIC imaging.
In 1963, Pease and Nixon incorporated the Everhart-Thornley detector into their prototype for the first commercial SEM, later developed as the Cambridge Scientific Instruments Mark I Stereoscan.
This type of secondary electron and back-scattered electron detector is still used in modern scanning electron microscopes (SEMs).
By using various types of detectors with SEM, it becomes possible to map the topography, crystallography and composition of specimens being examined.
Everhart was elected a member of the National Academy of Engineering in 1978 for contributions to the electron optics of the scanning electron microscope and to its use in electronics and biology.
In January 1979, he became Joseph Silbert Dean of the college of engineering at Cornell University, Ithaca, New York.
He served as chancellor of the University of Illinois at Urbana-Champaign from 1984 to 1987 and as the president of the California Institute of Technology from 1987 to 1997.
Everhart's parents were William E. Everhart and Elizabeth A. West.
Everhart served as chancellor of the University of Illinois at Urbana-Champaign from 1984 to 1987.
As chancellor, Everhart was involved in proposals for and development of the Beckman Institute for Advanced Science and Technology, an interdisciplinary research institute substantially funded by an appeal to Arnold Orville Beckman.
In a formal invitation to proposed members of the Administrative Committee for the Beckman Institute, Everhart wrote that creation of the Beckman Institute was "an exceptional opportunity, perhaps the most dramatic and exciting one that we will see in our working lifetimes."
Everhart was president of the California Institute of Technology from 1987 to 1997.
He was appointed an International Fellow of the Royal Academy of Engineering in 1990.